any changing of specification will not be informed individual MMDL914 surface mount switching diode 1 c a thode 2 anode s h i p p i n g : 3 0 0 0 / t a p e & r e e l . . . . . . . f e a t u r e s c a s e : s o d - 3 2 3 l , m o l d e d p l a s t i c p o l a r i t y : s e e d i a g r a m s b e l o w m e c h a n i c a l d a t a f a s t s w i t c h i n g s p e e d f o r g e n e r a l p u r p o s e s w i t c h i n g a p p l i c a t i o n s u r f a c e m o u n t p a c k a g e i d e a l l y s u i t e d f o r a u t o m a t i c i n s e r t i o n m o u n t i n g p o s i t i o n : a n y m a x i m u m r a t i n g s r a t i n g symbol value unit reverse voltage v r 100 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board,* t a = 25 c derate above 25 c p d 2 00 1. 57 mw mw/ c thermal resistance junction to ambient r q ja 635 c/w junction and storage temperature t j , t stg -50 to +150 c * *fr-4 minimum pad device marking mm d l914 = 5d electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse breakdown voltage (i r = 100 adc) v (br) 100 e vdc reverse voltage leakage current (v r = 20 vdc) (v r = 75 vdc) i r e e 25 5.0 nadc adc diode capacitance (v r = 0, f = 1.0 mhz) c t e 4.0 pf forward voltage (i f = 10 madc) v f e 1.0 vdc reverse recovery time (i f = i r = 10 madc) (figure 1) t rr e 4.0 ns http://www.secosgmbh.com ele k troni sche bauelemente 01 -jun-2007 rev. b page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free d i m e n s i o n s i n i n c h ( m m ) s o d - 3 2 3 l 0 . 0 6 3 ( 1 . 6 0 ) 0 . 0 7 1 ( 1 . 8 0 ) 0 . 0 4 5 ( 1 . 1 5 ) 0 . 0 5 3 ( 1 . 3 5 ) 0 . 0 0 2 ( 0 . 0 5 ) 0 . 0 1 0 ( 0 . 2 5 ) 0 . 0 1 0 ( 0 . 2 5 ) 0 . 0 1 6 ( 0 . 4 0 ) 0 . 0 9 1 ( 2 . 3 ) 0 . 1 1 0 ( 2 . 8 ) 0 . 0 3 1 ( 0 . 8 0 ) 0 . 0 4 3 ( 1 . 1 0 )
100 0.2 0.4 v f , f orward voltage (v) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , r everse voltage (v) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , r everse voltage (v) 0.64 0.60 0.56 0.52 c d , d iode capacitance (pf) 2468 i f , f orward current (ma) (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = 40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , r everse curren t ( m a) notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w i nput sampling oscilloscopes t r t p t 10% 90% i f i r t rr t i r(rec ) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec ) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit any changing of specification will not be informed individual MMDL914 surface mount switching diode http://www.secosgmbh.com ele k troni sche bauelemente 01 -jun-2007 rev. b page 2 of 2
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